HGTG40N60B3

S E M I C O N D U C T O R HGTG40N60B3 70A, 600V, UFS Series N-Channel IGBT Package JEDEC STYLE TO-247 E C G PRELIMINARY May 1995 Features 70A, 600V at TC = +25 C Square Switching SOA Capability Typical Fall Time - 160ns at +150oC Short Circuit Rating Low Conduction Loss o Description The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG40N60B3 PACKAGE TO-247 BRAND G40N60B3 E Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G NOTE: When ordering, use the entire part number. Formerly Developmental Type TA49052 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG40N60B3 600 600 70 40 330 ±20 ±30 160A at 0.8 BVCES 290 2.33 -40 to +150 260 2 10 UNITS V V A A A V V W W/oC oC oC µs µs Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage, RGE = 1MΩ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCG...