HIRP2013X10-B40

HIRP2013X10-B40 SMD Type 850nm Infrared Emitter Features  Small double-end package  Viewing Angle= 700  High reliability  Good spectral matching to Si photo detector  RoHS compliance Applications  Infrared sensor Description The HIRP2013X10-B40 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 850nm LED spectrally matched with phototransistor or photodiode. Package Outline Schematic Anode CT Micro Proprietary & Confidential Cathode Page 1 Rev 1 Dec, 2018 HIRP2013X10-B40 SMD Type 850nm Infrared Emitter Absolute Maximum Rating at 250C Symbol Parameters IF Continuous Forward Current IFP Peak Forward Current VR Reverse Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature PD Power Dissipation at(or below) 25℃ Free Air Temperature Ratings 70 0.7 5 -40 ~ +85 -40 ~ +100 260 140 Units mA A V 0C 0C 0C mW Notes 1 2 Electro-Optical Characteristics TA = 25°C (unless otherwise specified) Optical Characteristics Symbol Parameters Test Conditions Min Ie Radiant Intensity λp Δλ θ1/2 Peak Wavelength Spectral Bandwidth Angle of Half Intensity IF=20mA IF=70mA IF=20mA IF=20mA IF=20mA 1.60 - Typ 2.20 8.0 850 30 70 Max 3.20 - Units Notes mW/sr 3 nm nm deg Electrical Characteristics Symbol Parameters VF Forward Voltage IR Reverse Current Test Conditions IF=20mA IF=70mA IF=0.5A,Tp=3ms IF=1A,Tp=3ms VR=5V Notes: 1. IFP Conditions--Pulse Width≦ 100μs and Duty≦ 1%. 2. Soldering...