HIRP3216Q18-C0

HIRP3216Q18-C0 SMD Type 850nm Infrared Emitter Features  Small double-end package  Viewing Angle = 100  High radiant intensity  High reliability  Good spectral matching to Si photo detector  RoHS compliance Applications  Infrared sensor Description The HIRP3216Q18-C0 is a GaAlAs infrared LED housed in a miniature SMD package. The device has a peak wavelength of 850nm LED spectrally matched with phototransistor or photodiode. Package Outline Schematic Cathode Anode CT Micro Proprietary & Confidential Page 1 Rev 0 (Preliminary) Jun, 2018 HIRP3216Q18-C0 SMD Type 850nm Infrared Emitter Absolute Maximum Rating at 250C Symbol Parameters IF Continuous Forward Current IFP Peak Forward Current VR Reverse Voltage Topr Operating Temperature Tstg Storage Temperature Tsol Soldering Temperature PD Power Dissipation at(or below) 25℃Free Air Temperature RTHJA Junction to Ambient Thermal Resistance Ratings 70 0.7 5 -40 ~ +85 -40 ~ +100 260 140 540 Units mA A V 0C 0C 0C mW 0C/W Notes 1 2 Electro-Optical Characteristics TA = 25°C (unless otherwise specified) Optical Characteristics Symbol Parameters Ie Radiant Intensity λp Δλ θ1/2 Peak Wavelength Spectral Bandwidth Angle of Half Intensity Test Conditions IF=20mA IF =70mA IF=20mA IF=20mA IF=20mA Min Typ Max Units Notes 12.5 20 - 65 -mW/sr - 830 850 870 nm - 30 - nm - 10 - deg Electrical Characteristics Symbol Parameters VF Forward Voltage IR Reverse Current Test Conditions IF=20mA IF=70mA VR=5...