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HIT468

Renesas Technology

Silicon NPN Epitaxial

www.DataSheet4U.com HIT468 Silicon NPN Epitaxial REJ03G1502-0200 Rev.2.00 Mar 05, 2007 Features • Low frequency power ...


Renesas Technology

HIT468

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www.DataSheet4U.com HIT468 Silicon NPN Epitaxial REJ03G1502-0200 Rev.2.00 Mar 05, 2007 Features Low frequency power amplifier Complementary pair with HIT562 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20% Symbol VCBO VCEO VEBO IC IC (peak) *1 PC Tj Tstg Ratings 45 25 6 1.0 1.5 0.8 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Mar 05, 2007 page 1 of 4 HIT468 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VBE VBE(sat) Min 45 25 6 — — 45 85 40 — — — Typ — — — — — — — — — — — Max — — — 500 500 — 330 — 0.5 1.0 1.2 Unit V V V nA nA — — — V V V Test conditions IC = 10 µA, IE = 0 IC = 100 µA, RBE = ∞ IE = 10 µA, IC = 0 VCB = 45 V, IE = 0 VEB = 6 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 100 mA VCE = 1 V, IC = 800 mA IC = 800 mA, IB = 80 mA VCE = 1 V, IC = 10 mA IC = 800 mA, IB = 80 mA Collector to emitter saturation voltage Base to emitter voltage Base to emitter saturation voltage Rev.2.00 Mar 05...




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