isc P-Channel MOSFET Transistor
HLP5305
FEATURES ·Drain Current –ID= -31A@ TC=25℃ ·Drain Source Voltage-
: VDSS= -55V(...
isc P-Channel
MOSFET Transistor
HLP5305
FEATURES ·Drain Current –ID= -31A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= -55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 65mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
-55
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
-31
A
IDM
Drain Current-Single Pluse
-62
A
PD
Total Dissipation @TC=25℃
96
W
TJ
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.3
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc P-Channel
MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown
Voltage
VGS= 0; ID= -250uA
VGS(th) Gate Threshold
Voltage
VDS= VGS; ID= -250uA
RDS(on) Drain-Source On-Resistance
VGS= -10V; ID= -15A
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
IDSS
Zero Gate
Voltage Drain Current
VDS= -55V; VGS= 0
VSD
Forward On-
Voltage
IS= -15A; VGS= 0
HLP5305
MIN MAX UNIT
-55
V
-1.0
-2.5
V
65
mΩ
±100 nA
-1
μA
-1.5
V
NOTICE： ISC reserves the rights to make changes of the ...
