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HLX6228 SOI Datasheet PDF128K x 8 STATIC RAM-Low Power SOI 128K x 8 STATIC RAM-Low Power SOI |
| Part Number | HLX6228 |
|---|---|
| Description | 128K x 8 STATIC RAM-Low Power SOI |
| Feature | www. DataSheet4U. com Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0. 7 µm Low Power Process (Leff = 0. 55 µm) • Total Dose Hardness through 1x106 rad(Si) • Neutron Hardness through 1x1014 cm-2 • Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s • Dose Rate Survivability through 1x1011 rad(Si)/s • Soft Error Rate of <1x10-10 Upsets/bit-day in Geosynchronous Orbit • No Latchup OTHER • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Typical Operating Power <9 mW/MHz • JEDEC Standard. |
| Manufacture | Honeywell |
| Datasheet |
| Part Number | HLX6228 |
|---|---|
| Description | 128K x 8 STATIC RAM-Low Power SOI |
| Feature | www. DataSheet4U. com Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0. 7 µm Low Power Process (Leff = 0. 55 µm) • Total Dose Hardness through 1x106 rad(Si) • Neutron Hardness through 1x1014 cm-2 • Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s • Dose Rate Survivability through 1x1011 rad(Si)/s • Soft Error Rate of <1x10-10 Upsets/bit-day in Geosynchronous Orbit • No Latchup OTHER • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Typical Operating Power <9 mW/MHz • JEDEC Standard. |
| Manufacture | Honeywell |
| Datasheet |
| Part Number | HLX6228 |
|---|---|
| Description | 128K x 8 STATIC RAM-Low Power SOI |
| Feature | www. DataSheet4U. com Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0. 7 µm Low Power Process (Leff = 0. 55 µm) • Total Dose Hardness through 1x106 rad(Si) • Neutron Hardness through 1x1014 cm-2 • Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s • Dose Rate Survivability through 1x1011 rad(Si)/s • Soft Error Rate of <1x10-10 Upsets/bit-day in Geosynchronous Orbit • No Latchup OTHER • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Typical Operating Power <9 mW/MHz • JEDEC Standard. |
| Manufacture | Honeywell |
| Datasheet |
| Part Number | HLX6228 |
|---|---|
| Description | 128K x 8 STATIC RAM-Low Power SOI |
| Feature | www. DataSheet4U. com Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION • Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0. 7 µm Low Power Process (Leff = 0. 55 µm) • Total Dose Hardness through 1x106 rad(Si) • Neutron Hardness through 1x1014 cm-2 • Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s • Dose Rate Survivability through 1x1011 rad(Si)/s • Soft Error Rate of <1x10-10 Upsets/bit-day in Geosynchronous Orbit • No Latchup OTHER • Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) • Typical Operating Power <9 mW/MHz • JEDEC Standard. |
| Manufacture | Honeywell |
| Datasheet |
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