HLX6228

www.DataSheet4U.com Military & Space Products HLX6228 128K x 8 STATIC RAM—Low Power SOI FEATURES RADIATION Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.7 µm Low Power Process (Leff = 0.55 µm) Total Dose Hardness through 1x106 rad(Si) Neutron Hardness through 1x1014 cm-2 Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s Dose Rate Survivability through 1x1011 rad(Si)/s Soft Error Rate of <1x10-10 Upsets/bit-day in Geosynchronous Orbit No Latchup OTHER Read/Write Cycle Times ≤ 32 ns (-55 to 125°C) Typical Operating Power <9 mW/MHz JEDEC Standard Low Voltage CMOS Compatible I/O Single 3.3 V ± 0.3 V Power Supply Asynchronous Operation Packaging Options – 32-Lead CFP (0.820 in. x 0.600 in.) – 40-Lead CFP (0.775 in. x 0.710 in.) GENERAL DESCRIPTION The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in low voltage systems operating in radiation environments. The RAM operates over the full military temperature range and requires only a single 3.3 V ± 0.3V power supply. The RAM is compatible with JEDEC standard low voltage CMOS I/O. Power consumption is typically less than 9 mW/MHz in operation, and less than 2 mW when deselected. The RAM read operation is fully asynchronous, with an associated typical access time of 32 ns at 3.3 V. Honeywel...