HM20N120T

IGBT Features  1200V,20A,VCE(sat)(typ.)=2.1V@VGE=15V，20A  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square RBSOA using NPT technology General Description H&M NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating),UPS, general inverter and other soft switching applications. Absolute Maximum Ratings Symbol Parameter VCES VGES IC Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current ( TC=25 ℃) Continuous Collector Current ( TC=100℃) ICM Pulsed Collector Current (Note 1) IF Diode Continuous Forward Current ( TC=100 ℃) IFM Diode Maximum Forward Current (Note 1) tsc Short Circuit Withstand Time PD Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) TJ Operating Junction Temperature Range TSTG Storage Temperature Range Thermal Characteristics Symbol Rth j-c Rth j-c Rth j-a Parameter Thermal Resistance, Junction to case for IGBT Thermal Resistance, Junction to case for Diode Thermal Resistance, Junction to Ambient HM20N120T Value 1200 + 30 40 20 190 15 190 10 192 76 -55 to +150 -55 to +150 Max. 0.45 0.85 40 Units V V A A A A A us W W ℃ ℃ Units ℃/W ℃/W ℃/W -1- Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Rev1.1 November. 2011 HM20N120T Electrical Characteristics (TC=25℃ unless otherwise noted ) Symbol Parameter BVCES ICES IGES Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Gate Leaka...