IGBT
Features
1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft ...
IGBT
Features
1200V,20A VCE(sat)(typ.)=2.7V@VGE=15V,IC=20A High speed switching Higher system efficiency Soft current turn-off waveforms
+017%
+
General Description
KEDA PT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), and other soft switching applications.
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter
Voltage
VGES IC
Gate-Emitter
Voltage Continuous Collector Current ( TC=25 ℃ ) Continuous Collector Current ( TC=100℃ )
ICM
Pulsed Collector Current (Note 1)
IF
Diode Continuous Forward Current ( TC=100 ℃ )
IFM
Diode Maximum Forward Current (Note 1)
PD
Maximum Power Dissipation ( TC=25 ℃ ) Maximum Power Dissipation ( TC=100℃ )
TJ
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Thermal Characteristics
Value 1200 + 30
40 20 60 20 60 170 65 -55 to +150 -55 to +150
Symbol Rth j-c Rth j-c Rth j-a
Parameter Thermal Resistance, Junction to case for IGBT Thermal Resistance, Junction to case for Diode Thermal Resistance, Junction to Ambient
Max. 0.74 0.95 40
-1-
Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com
Units V V A A A A A W W ℃ ℃
Units ℃/ W ℃/ W ℃/ W
+017%
Electrical Characteristics (TC=25℃ unless otherwise noted )
Symbol
Parameter
BVCES ICES
IGES
Collector-Emitter Breakdown
Voltage Collector-Emitter Leakage Current Gate Leakage Current, Forward Gate Leakage Current, Reverse
VGE(th) VCE(sat) Qg Qge Qgc
Gate Threshold Volt...
