| Part Number | HM2N15R |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appl... |
| Features |
● VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits HM2N15R D... |
| Datasheet | HM2N15R pdf datasheet |
| Part Number | HM2N15PR |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of app. |
| Features |
● VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits HM2N15PR . |
| Datasheet | HM2N15PR pdf datasheet |
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