| Part Number | HM2N20R |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM2N20R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appl... |
| Features |
● VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterru... |
| Datasheet | HM2N20R pdf datasheet |
| Part Number | HM2N20PR |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of app. |
| Features |
● VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterru. |
| Datasheet | HM2N20PR pdf datasheet |
| Part Number | HM2N20 |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appli. |
| Features |
● VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterru. |
| Datasheet | HM2N20 pdf datasheet |
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