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HM3019 Datasheet

Part Number HM3019
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet HM3019 DatasheetHM3019 Datasheet (PDF)

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  HM3019   HM3019






Part Number HM3018SR
Manufacturers H&M Semiconductor
Logo H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Datasheet HM3019 DatasheetHM3018SR Datasheet (PDF)

J M SOT-523 Plastic-Encapsulate MOSFETS HM3018SR N-channel MOSFET V(BR)DSS 30 V RDS(on)MAX  8Ω@4V  13Ω@2.5V   ID 100mA SOT-523 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Easily designed drive circuits z Easy to parallel MARKING APPLICATION z Interfacing , Switching Equivalent Circuit MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Volta.

  HM3019   HM3019







Part Number HM3018KR
Manufacturers H&M Semiconductor
Logo H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Datasheet HM3019 DatasheetHM3018KR Datasheet (PDF)

Silicon N-channel MOSFET 100 mA, 30 V • Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. • ESD>500V • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Parameter Symbol Drain.

  HM3019   HM3019







Part Number HM3018JR
Manufacturers H&M Semiconductor
Logo H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Datasheet HM3019 DatasheetHM3018JR Datasheet (PDF)

J e PMNUgo SOT-723 Plastic-Encapsulate MOSFETS HM3018JR N-Channel MOSFET V(BR)DSS RDS(on)MAX  8Ω@4V  30 V 13Ω@2.5V   ID 100mA SOT-723 1. GATE 2. SOURCE 3. DRAIN FEATURE z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Drive circuits can be simple z Parallel use is easy MARKING APPLICATION z Interfacing , Switching Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-source voltage Gate-source v.

  HM3019   HM3019







Part Number HM3018
Manufacturers H&M Semiconductor
Logo H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
Datasheet HM3019 DatasheetHM3018 Datasheet (PDF)

HM3018  / Descriptions SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,,,。 Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applications ,。 Interfacing, switching. / Equivalent Circuit / Pinning 3 2 1 PIN1:S PIN 2:G PIN 3:D / Marking Marking KL  Shenzhen H&M Semiconductor Co.Ltd http://www.hmsemi.com 1/6 HM3018  / Absolute Maximum Ratings(Ta=25℃) Parameter Drain-Source Vo.

  HM3019   HM3019







NPN EPITAXIAL PLANAR TRANSISTOR

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2005-03-26 : HYB3116160BSJ    HYB3116160BSJ-50    HYB3116160BSJ-60    HYB3116160BSJ-70    HYB3116160BST-50    HYB3116160BST-60    HYB3116160BST-70    HYB3116400BJ-50    HYB3116400BJ-60    HYB3116400BJ-70   


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