| Part Number | HM3416E |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | 20V N-Channel Enhancement-Mode MOSFET 20V N MOS HM3416E VDS= 20 ID=4.2 A RDS(ON), Vgs @ 1.8V, Ids @ 3A = 36mΩ RDS(ON), Vgs @ 2.5V, Ids @ 3.... |
| Features |
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
Marking
D
AEZE-**
SOT-23(PACKAGE)
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. Max.
1.90... |
| Datasheet | HM3416E pdf datasheet |
| Part Number | HM3416B |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM3416B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This de. |
| Features |
● VDS = 20V,ID =6A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram 3416 Marking and pin assignment Application ● PWM application ● Load switch SOT-23 top. |
| Datasheet | HM3416B pdf datasheet |
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