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HM3N40PR Datasheet

Part Number HM3N40PR
Manufacturers H&M Semiconductor
Logo H&M Semiconductor
Description Silicon N-Channel Power MOSFET
Datasheet HM3N40PR DatasheetHM3N40PR Datasheet (PDF)

HM3N40PR Silicon N-Channel Power MOSFET General Description: VDSS 400 V HM3N40PR, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-89-3L, which accords with the RoHS.

  HM3N40PR   HM3N40PR






Silicon N-Channel Power MOSFET

HM3N40PR Silicon N-Channel Power MOSFET General Description: VDSS 400 V HM3N40PR, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-89-3L, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of LCD Power and adaptor. Absolute(Tc= 25℃ unless otherwise specified): Symbol VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Parameter Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100.


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