| Part Number | HM4487 |
| Manufacturer | H&M Semiconductor |
| Title | P-Channel Enhancement Mode Power MOSFET |
| Description | The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appli... |
| Features |
● VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance S Schematic diagram HM4487 Application ● Power management in notebook computer ● Portable e... |
| Datasheet | HM4487 pdf datasheet |
| Part Number | HM4488 |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appli. |
| Features |
● VDS =150V,ID =5.2A RDS(ON) < 44mΩ @ VGS=10V （Typ：31mΩ） Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses +0 Application ● Power switching application ● Hard switche. |
| Datasheet | HM4488 pdf datasheet |
| Part Number | HM4487B |
| Manufacturer | H&M Semiconductor |
| Title | P-Channel Enhancement Mode Power MOSFET |
| Description | The HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appl. |
| Features |
● VDS =-100V,ID =-3.5A RDS(ON) <200mΩ @ VGS=-10V (Typ:170mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance S Schematic diagram HM4487B Application ● Power management in notebook computer ● Portable. |
| Datasheet | HM4487B pdf datasheet |
| Part Number | HM4487A |
| Manufacturer | H&M Semiconductor |
| Title | P-Channel Enhancement Mode Power MOSFET |
| Description | The HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appl. |
| Features |
● VDS =-100V,ID =-7.5A RDS(ON) <58mΩ @ VGS=-10V (Typ:44mΩ) RDS(ON) <65mΩ @ VGS=-4.5V (Typ:48mΩ) ● Super high dense cell design ● Advanced trench process technology ● Reliable and rugged ● High density cell design for ultra low On-Resistance S Schematic diagram HM4487A Application ● Power managemen. |
| Datasheet | HM4487A pdf datasheet |
| Part Number | HM4486E |
| Manufacturer | H&M Semiconductor |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | zzApSPpyolnwicceharrtMoinoaonnuassgRemecetnifticinatIinovnerter System Switching Time Test Circuit and Waveforms Marking. |
| Features |
zzzzVERHRRSeDiglDDDSihSSSa=((bpOOD1lrNNeoe0))n==t0aes11Vnci07dtt／y55RmmCVuΩΩegGlSgl((SMMeD=daa±exxs2i..0g))@@Vn ／FVVoGGIrDSS==U=413lt.0.r55VaVALow On-Resistance
Pin Description
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| Datasheet | HM4486E pdf datasheet |
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