| Part Number | HM4606C |
| Manufacturer | H&M Semiconductor |
| Title | N & P-Channel Enhancement Mode Power MOSFET |
| Description | The HM4606C uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or... |
| Features |
● N-Channel VDS = 20V,ID =5.0A RDS(ON) < 59mΩ @ VGS=10V RDS(ON) < 45mΩ @ VGS=4.5V ● P-Channel VDS = -20V,ID = -4.0A RDS(ON) < 140mΩ @ VGS=-4.5V RDS(ON) < 110mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount pack age N-channel P-channel Schem... |
| Datasheet | HM4606C pdf datasheet |
| Part Number | HM4606D |
| Manufacturer | H&M Semiconductor |
| Title | N & P-Channel Enhancement Mode Power MOSFET |
| Description | The HM4606D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or. |
| Features |
● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V RDS(ON) < 36mΩ @ VGS=4.5V ● P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount pack age N-channel P-channel Schemat. |
| Datasheet | HM4606D pdf datasheet |
| Part Number | HM4606B |
| Manufacturer | H&M Semiconductor |
| Title | N & P-Channel Enhancement Mode Power MOSFET |
| Description | The HM4606B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a lev. |
| Features |
● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V ● P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking . |
| Datasheet | HM4606B pdf datasheet |
| Part Number | HM4606A |
| Manufacturer | H&M Semiconductor |
| Title | N & P-Channel Enhancement Mode Power MOSFET |
| Description | The HM4606A uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a lev. |
| Features |
● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 30mΩ @ VGS=10V ● P-Channel VDS = -30V,ID = -7A RDS(ON) < 33mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package N-channel P-channel Schematic diagram Marking and pin assignment Package Marking . |
| Datasheet | HM4606A pdf datasheet |
| Part Number | HM4606 |
| Manufacturer | H&M Semiconductor |
| Title | N & P-Channel Enhancement Mode Power MOSFET |
| Description | The HM4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . This device is suitable for use as a load switch or . |
| Features |
● N-Channel VDS = 30V,ID =7.0A RDS(ON) < 31mΩ @ VGS=10V RDS(ON) < 43mΩ @ VGS=4.5V ● P-Channel VDS = -30V,ID = -5.1A RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package N-channel P-channel Schemati. |
| Datasheet | HM4606 pdf datasheet |
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