| DatasheetsPDF.com |
HM624100H 4-bit Datasheet PDFx 4-bit x 4-bit |
| Part Number | HM624100H |
|---|---|
| Description | 4M High Speed SRAM (1-Mword x 4-bit) |
| Feature | HM624100H Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM624100H is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply : 5.0 V ± 1. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part Number | HM624100H |
|---|---|
| Description | 4M High Speed SRAM (1-Mword x 4-bit) |
| Feature | HM624100H Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM624100H is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply : 5.0 V ± 1. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part Number | HM624100HC |
|---|---|
| Description | 4M High Speed SRAM (1-Mword x 4-bit) |
| Feature | HM624100HC Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-1198 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM624100HC is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply : 5.0 V ± 10 %. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part Number | HM624100HC |
|---|---|
| Description | 4M High Speed SRAM (1-Mword x 4-bit) |
| Feature | HM624100HC Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-1198 (Z) Preliminary Rev. 0.0 Nov. 30, 2000 Description The HM624100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM624100HC is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply : 5.0 V ± 10 %. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part Number | HM624100H |
|---|---|
| Description | 4M High Speed SRAM (1-Mword x 4-bit) |
| Feature | HM624100H Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM624100H is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply : 5.0 V ± 1. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part Number | HM624100H |
|---|---|
| Description | 4M High Speed SRAM (1-Mword x 4-bit) |
| Feature | HM624100H Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-789D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM624100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM624100H is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single 5.0 V supply : 5.0 V ± 1. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
|
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |