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HM6264B 8-bit Datasheet PDFx 8-bit |
| Part Number | HM6264B |
|---|---|
| Description | 64 k SRAM (8-kword x 8-bit) |
| Feature | HM6264B Series 64 k SRAM (8-kword × 8-bit) ADE-203-454B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM6264B is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, 300 mil plastic DIP, is available for high density mounting. Features • High speed Fast access time: 85/100 ns (max) • Low power Standby: 10 µW (typ) Operation: 15 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static memory No clock or timing strobe requi. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part Number | HM6264BI |
|---|---|
| Description | 64k SRAM (8-kword x 8-bit) Wide Temperature Range version |
| Feature | HM6264BI Series 64k SRAM (8-kword × 8-bit) Wide Temperature Range version ADE-203-492C (Z) Rev. 3.0 May. 8, 2000 Description The Hitachi HM6264BI is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, is available for high density mounting. Features • Single 5 V supply: 5 V ± 10% • Access time: 100/120 ns (max) • Power dissipation: Standby: 10 µW (typ) Operation: 15 mW (typ) (f = 1 MHz) • Completely static memory No clo. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
| Part Number | HM6264B |
|---|---|
| Description | 64 k SRAM (8-kword x 8-bit) |
| Feature | HM6264B Series 64 k SRAM (8-kword × 8-bit) ADE-203-454B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HM6264B is 64k-bit static RAM organized 8-kword × 8-bit. It realizes higher performance and low power consumption by 1.5 µm CMOS process technology. The device, packaged in 450 mil SOP (foot print pitch width), 600 mil plastic DIP, 300 mil plastic DIP, is available for high density mounting. Features • High speed Fast access time: 85/100 ns (max) • Low power Standby: 10 µW (typ) Operation: 15 mW (typ) (f = 1 MHz) • Single 5 V supply • Completely static memory No clock or timing strobe requi. |
| Manufacture | Hitachi Semiconductor |
| Datasheet |
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