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HM62W4100H Datasheet

Part Number HM62W4100H
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 4M High Speed SRAM (1-Mword x 4-bit)
Datasheet HM62W4100H DatasheetHM62W4100H Datasheet (PDF)

HM62W4100H Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM62W4100H is packag.

  HM62W4100H   HM62W4100H






Part Number HM62W4100HC
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 4M High Speed SRAM (1-Mword x 4-bit)
Datasheet HM62W4100H DatasheetHM62W4100HC Datasheet (PDF)

HM62W4100HC Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-1202 (Z) Preliminary Rev. 0.0 Sep. 28, 2000 Description The HM62W4100HC is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM62W4100HC is packaged .

  HM62W4100H   HM62W4100H







4M High Speed SRAM (1-Mword x 4-bit)

HM62W4100H Series 4M High Speed SRAM (1-Mword × 4-bit) ADE-203-774D (Z) Rev. 1.0 Sep. 15, 1998 Description The HM62W4100H is a 4-Mbit high speed static RAM organized 1-Mword × 4-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in system. The HM62W4100H is packaged in 400-mil 32-pin SOJ for high density surface mounting. Features • Single supply : 3.3 V ± 0.3 V • Access time 12/15 ns (max) • Completely static memory  No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible  All inputs and outputs • Operating current : 180/160 mA (max) • TTL standby current : 60/50 mA (max) • CMOS standby current : 5 mA (max) : 1 mA (max) (L-version) • Data retension current : 0.6 mA (max) (L-version) • Data retension voltage: 2 V (min) (L-version) • Center VCC and VSS type pinout HM62W4100H Series Ordering Information Type No. HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15 Access time 12 ns 15 ns 12 ns 15 ns Package 400-mil 32-pin plastic SOJ (CP-32DB) Pin Arrangement HM62W4100HJP/HLJP Series A0 A1 A2 A3 A4 CS I/O1 VCC VSS I/O2 WE A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE I/O4 VSS VCC I/O3 A14 A13 A12 A11 A10 .


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