HM62W8511HC

HM62W8511HC Series 4M High Speed SRAM (512-kword × 8-bit) ADE-203-1201 (Z) Preliminary Rev. 0.0 Sep. 20, 2000 Description The HM62W8511HC is a 4-Mbit high speed static RAM organized 512-kword × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The HM62W8511HC is packaged in 400-mil 36-pin SOJ for high density surface mounting. Features Single supply : 3.3 V ± 0.3 V Access time : 10 ns (max) Completely static memory  No clock or timing strobe required Equal access and cycle times Directly TTL compatible  All inputs and outputs Operating current : 115 mA (max) TTL standby current : 40 mA (max) CMOS standby current : 5 mA (max) : 1 mA (max) (L-version) Data retension current : 0.6 mA (max) (L-version) Data retension voltage : 2 V (min) (L-version) Center VCC and VSS type pinout Preliminary: The specification of this device are subject to change without notice. Please contact your nearest Hitachi’s Sales Dept. regarding specification. HM62W8511HC Series Ordering Information Type No. HM62W8511HCJP-10 HM62W8511HCLJP-10 Access time 10 ns 10 ns Package 400-mil 36-pin plastic SOJ (CP-36D) 2 HM62W8511HC Series Pin Arrangement 36-pin SOJ A0 A1 A2 A3 A4 CS I/O1 I/O2 VCC VSS I/O3 I/O4 WE A5 A6 A7 A8 A9 ...