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HM62W8512B

Hitachi Semiconductor

4 M SRAM (512-kword x 8-bit)

HM62W8512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-904E (Z) Rev. 4.0 Oct. 20, 1999 Description The Hitachi HM62W851...


Hitachi Semiconductor

HM62W8512B

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Description
HM62W8512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-904E (Z) Rev. 4.0 Oct. 20, 1999 Description The Hitachi HM62W8512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYPE II is available for high density mounting. The HM62W8512B is suitable for battery backup system. Features Single 3.3 V supply: 3.3 V ± 0.3 V Access time: 55/70 ns (max) Power dissipation  Active: 16.5 mW/MHz (typ)  Standby: 3.3 µW (typ) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output: Three state output Directly LV-TTL compatible: All inputs and outputs Battery backup operation HM62W8512B Series Ordering Information Type No. HM62W8512BLFP-5 HM62W8512BLFP-7 Access time 55 ns 70 ns Package 525-mil 32-pin plastic SOP (FP-32D) HM62W8512BLFP-5SL 55 ns HM62W8512BLFP-7SL 70 ns HM62W8512BLFP-5UL 55 ns HM62W8512BLFP-7UL 70 ns HM62W8512BLTT-5 HM62W8512BLTT-7 HM62W8512BLTT-5SL HM62W8512BLTT-7SL 55 ns 70 ns 55 ns 70 ns 400-mil 32-pin plastic TSOP II (TTP-32D) HM62W8512BLTT-5UL 55 ns HM62W8512BLTT-7UL 70 ns HM62W8512BLRR-5 HM62W8512BLRR-7 55 ns 70 ns 400-mil 32-pin plastic TSOP II reverse (TTP-32DR) HM62W8512BLRR-5SL 55 ns HM62W8512BLRR-7SL 70 ns HM62W8512BLRR-5UL 55 ns HM62W8512BLRR-7UL 70 ns 2 HM62W8512B Series Pin Arr...




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