HMBT4403

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/4 HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages. Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ -40 V VCEO Collector to Emitter Voltage............................................................