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HMBT4403 Datasheet

PNP Transistor

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/4 HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature ...


Hi-Sincerity Mocroelectronics
HMBT4403.pdf

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Hi-Sincerity Mocroelectronics HMBT4403 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/4 HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ -40 V VCEO Collector to Emitter Voltage..........................................................






HI-SINCERITY MICROELECTRONICS CORP. HMBT4403XLT1G General Purpose Transistor PNP Silicon Features • RoHS Compliant and Halogen Free Ordering Information Device HMBT4403XLT1G Marking 2T Maximum Ratings (TA=25oC) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Shipping 3000/Tape & Ree.


HI-SINCERITY
HMBT4403XLT1G.pdf

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HI-SINCERITY HMBT4403XLT1G Datasheet

HI-SINCERITY MICROELECTRONICS CORP. HMBT4403XLT1G General Purpose Transistor PNP Silicon Features • RoHS Compliant and Halogen Free Ordering Information Device HMBT4403XLT1G Marking 2T Maximum Ratings (TA=25oC) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Shipping 3000/Tape & Reel Symbol VCEO VCBO VEBO IC 3 1 2 SOT-23 (TO-236) 3 Collector 1 Base Limits -40 -40 -5.0 -600 2 Emitter Units Vdc Vdc Vdc mAdc Thermal Characteristics Parameter Total Device Dissipation FR-5 Board*1, TA=25oC Total Device Dissipation, Derate above 25oC Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate*2, TA=25oC Total Device Dissipation, Derate above 25oC Thermal Resistance, Junction to Ambient Junction and Storage Temperature *1 FR-5=1.0x0.75x0.062 in. *2 Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD PD RƟJA PD PD RƟJA TJ, Tstg Limits 225 1.8 556 300 2.4 417 -55 to +150 Units mW mW/oC oC/W.






HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/4 HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature ...


Hi-Sincerity Mocroelectronics
HMBT4403.pdf

Preview
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Hi-Sincerity Mocroelectronics HMBT4403 Datasheet

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/4 HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature . -55 ~ +150 °C Junction Temperature. +150 °C • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) . 225 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage . -40 V VCEO Collector to Emitter Voltage.








 

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