HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5401
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Page No. : 1/4
Description
The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) • Complements to NPN Type HMBT5551
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature ...
PNP Transistor
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT5401
PNP EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Page No. : 1/4
Description
The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.
Features
• High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) • Complements to NPN Type HMBT5551
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature ... -55 ~ +150 °C Junction Temperature +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C) . 225 mW
• Maximum Voltages and Currents (TA=25°C) VCBO Collector to B.