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HMBT5401 Datasheet

Part Number HMBT5401
Manufacturers Hi-Sincerity Mocroelectronics
Logo Hi-Sincerity Mocroelectronics
Description PNP Transistor
Datasheet HMBT5401 DatasheetHMBT5401 Datasheet (PDF)

HI-SINCERITY MICROELECTRONICS CORP. HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Page No. : 1/4 Description The HMBT5401 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) • Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ...

  HMBT5401   HMBT5401






PNP Transistor

HI-SINCERITY MICROELECTRONICS CORP. HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Page No. : 1/4 Description The HMBT5401 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage (BVCEO=150V@IC=1mA) • Complements to NPN Type HMBT5551 SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ... -55 ~ +150 °C Junction Temperature +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) . 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to B.


2005-03-26 : HYB3116160BSJ    HYB3116160BSJ-50    HYB3116160BSJ-60    HYB3116160BSJ-70    HYB3116160BST-50    HYB3116160BST-60    HYB3116160BST-70    HYB3116400BJ-50    HYB3116400BJ-60    HYB3116400BJ-70   


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