HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8050
NPN EPITAXIAL TRANSISTOR
Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4
Description
The HMBT8050 is designed for general purpose amplifier applications.
Features
• High DC Current hFE=150-400 at IC=150mA • Complementary to HMBT8550
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature..
NPN Transistor
HI-SINCERITY
MICROELECTRONICS CORP.
HMBT8050
NPN EPITAXIAL TRANSISTOR
Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4
Description
The HMBT8050 is designed for general purpose amplifier applications.
Features
• High DC Current hFE=150-400 at IC=150mA • Complementary to HMBT8550
SOT-23
Absolute Maximum Ratings
• Maximum Temperatures Storage Temperature... -55 ~ +150 °C Junction Temperature +150 °C Maximum
• Maximum Power Dissipation Total Power Dissipation (TA=25°C). 225 mW
• Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .....