HMC-XDB112

HMC-XDB112 v00.0907 GaAs MMIC PASSIVE FREQUENCY DOUBLER, 10 - 15 GHz INPUT Features Conversion Loss: 13 dB Passive: No DC Bias Required Input Drive: +13 dBm High Fo Isolation: 30 dB Die Size: 2.2 x 0.65 x 0.1 mm Typical Applications 2 FREQUENCY MULTIPLIERS - PASSIVE - CHIP This HMC-XDB112 is ideal for: Point-to-Point Radios VSAT Test Instrumentation Military & Space www.DataSheet4U.com Clock Generation Functional Diagram General Description The HMC-XDB112 is a monolithic Passive Frequency Doubler which utilizes GaAs Heterojunction Bipolar Transistor (HBT) technology, and is targeted to high volume applications where frequency doubling of a lower frequency is more economical than directly generating a higher frequency. All bond pads and the die backside are Ti/Au metallized and the HBT devices are fully passivated for reliable operation. The HMC-XDB112 Passive Doubler MMIC is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations*, TA = 25 °C, Pin = +13 dBm Parameter Frequency Range Input Frequency Range Output Conversion Loss Fo Isolation with respect to output *Unless otherwise indicated, all measurements are from probed die Min. Typ. 10 - 15 20 - 30 13 30 Max. Units GHz GHz dB dB 2 - 68 For price, delivery, and to ...