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HMC1127 Datasheet

Part Number HMC1127
Manufacturers Analog Devices
Logo Analog Devices
Description Power Amplifier
Datasheet HMC1127 DatasheetHMC1127 Datasheet (PDF)

Data Sheet GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 FEATURES Output power for 1 dB compression (P1dB): 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to 30 GHz Gain: 14.5 dB typical at 30 GHz to 50 GHz Output third-order intercept (IP3): 23 dBm typical at 8 GHz to 30 GHz Supply voltage: 5 V at 80 mA 50 Ω matched input/output Die size: 2.7 mm × 1.45 mm × 0.1 mm APPLICATIONS Test instrumentation Microwave radios and VSATs.

  HMC1127   HMC1127






Part Number HMC1126
Manufacturers Analog Devices
Logo Analog Devices
Description Power Amplifier
Datasheet HMC1127 DatasheetHMC1126 Datasheet (PDF)

Data Sheet GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126 FEATURES Output power for 1 dB compression (P1dB): 17.5 dB typical Saturated output power (PSAT): 21 dBm typical Gain: 11 dB typical Output third-order intercept (IP3): 28 dBm typical Supply voltage: 5 V at 65 mA 50 Ω matched input/output Die size: 2.3 mm × 1.45 mm × 0.05 mm APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics FUNCTIONAL BLOCK DIAGRA.

  HMC1127   HMC1127







Part Number HMC1122
Manufacturers Analog Devices
Logo Analog Devices
Description Silicon Digital Attenuator
Datasheet HMC1127 DatasheetHMC1122 Datasheet (PDF)

Data Sheet 0.1 GHz to 6.0 GHz, 0.5 dB LSB, 6-Bit, Silicon Digital Attenuator HMC1122 GND D0 GND D1 GND D2 GND D3 GND D4 GND D5 13719-001 FEATURES Attenuation range: 0.5 dB LSB steps to 31.5 dB Low insertion loss 1.1 dB at 1 GHz 1.3 dB at 2 GHz Typical step error: less than ±0.1 dB Excellent attenuation accuracy Safe state transitions High linearity Input 0.1dB compression (P0.1dB): 30 dBm typical Input third-order intercept (IP3): 55 dBm typical RF settling time (0.05 dB final RF output): 250.

  HMC1127   HMC1127







Part Number HMC1121
Manufacturers Analog Devices
Logo Analog Devices
Description Power Amplifier
Datasheet HMC1127 DatasheetHMC1121 Datasheet (PDF)

Data Sheet 4 W, GaAs, pHEMT, MMIC Power Amplifier, 5.5 GHz to 8.5 GHz HMC1121 FEATURES High saturated output power (PSAT): 36.5 dBm at 30% power added efficiency (PAE) High output third-order intercept (IP3): 44 dBm typical High gain: 28 dB typical High output power for 1 dB compression (P1dB): 36 dBm typical Total supply current: 2200 mA at 7 V 40-lead, 6 mm × 6 mm LFCSP package: 36 mm2 APPLICATIONS Point to point radios Point to multipoint radios Very small aperture terminals (VSATs) and sat.

  HMC1127   HMC1127







Part Number HMC1120LP4E
Manufacturers Hittite
Logo Hittite
Description RMS POWER DETECTOR & ENVELOPE TRACKER
Datasheet HMC1127 DatasheetHMC1120LP4E Datasheet (PDF)

POWER DETECTORS - SMT v00.0814 Typical Applications The HMC1120LP4E is ideal for: • Log –> Root-Mean-Square (RMS) Conversion • Tx/Rx Signal Strength Indication (TSSI/RSSI) • RF Power Amplifier Efficiency Control • Receiver Automatic Gain Control • Transmitter Power Control • Envelope Tracking • PA Linearization Functional Diagram HMC1120LP4E RMS POWER DETECTOR & ENVELOPE TRACKER, DC - 3.9 GHz Features Broadband Single-Ended RF Input RMS Detector with ±1 dB Detection Accuracy up to 3.9 G.

  HMC1127   HMC1127







Power Amplifier

Data Sheet GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 FEATURES Output power for 1 dB compression (P1dB): 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to 30 GHz Gain: 14.5 dB typical at 30 GHz to 50 GHz Output third-order intercept (IP3): 23 dBm typical at 8 GHz to 30 GHz Supply voltage: 5 V at 80 mA 50 Ω matched input/output Die size: 2.7 mm × 1.45 mm × 0.1 mm APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFOUT RFIN 1 Figure 1. 5 VGG1 4 VGG2 13085-001 GENERAL DESCRIPTION The HMC1127 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates between 2 GHz and 50 GHz. The HMC1127 provides 14.5 dB of gain, 23 dBm output IP3 and 12.5 dBm of output power at 1 dB gain compression while requiring 80 mA from a 5 V supply. The HMC1127 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of paten.


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