HMC283

v02.0500 MICROWAVE CORPORATION HMC283 GaAs MMIC MEDIUM POWER AMPLIFIER, 17 - 40 GHz Features High Gain: 21 dB Psat Output Power: +21 dBm Wideband Performance: 17 - 40 GHz Small Chip Size: 0.88 mm x 1.72 mm 1 AMPLIFIERS - CHIP Typical Applications The HMC283 MPA is ideal for: Millimeterwave Point-to-Point Radios VSAT SATCOM Functional Diagram General Description The HMC283 chip is a four stage GaAs MMIC Medium Power Amplifier (MPA) which covers the frequency range of 17 to 40 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (1.62 mm2) size. The chip utilizes a GaAs PHEMT process offering 20 dB gain and +21 dBm output power from a bias supply of +3.5V @ 300mA. The HMC283 may be used as a frequency doubler. A B.I.T. (Built-In-Test) pad (Vdet) allows monitoring microwave output power. All data is with the chip in a 50 ohm test fixture connected via 0.076mm x 0.0127mm (3mil x 0.5mil) ribbon bonds of minimal length 0.31mm (<12mils). Electrical Specifications, TA = +25° C, Vdd= +3.5V*, ldd = 300 mA Parameter Frequency Range Gain Gain Flatness (Any 1 GHz BW) Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd)(Vdd = +3.5V, Vgg = -0.15V Typ.) 40 14 17 21 16 Min. Typ. 17 - 40 21 ±0.8 9 6 50 18 21 26 10 300 14 400 Max. Units GHz dB dB dB dB dB dBm dBm dBm dB mA *Vdd = Vd1, 2, 3, 4 connected to +3.5V,...