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HMC283LM1

Hittite Microwave Corporation

SMT MEDIUM POWER GaAs MMIC AMPLIFIER

v04.1201 MICROWAVE CORPORATION HMC283LM1 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz Features SMT mmWave Package ...



HMC283LM1

Hittite Microwave Corporation


Octopart Stock #: O-177582

Findchips Stock #: 177582-F

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Description
v04.1201 MICROWAVE CORPORATION HMC283LM1 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz Features SMT mmWave Package Psat Output Power: +21 dBm High Gain: 21 dB No External Matching Required 8 AMPLIFIERS - SMT Typical Applications The HMC283LM1 is ideal for: • Millimeterwave Point-to-Point Radios • LMDS • SATCOM Functional Diagram General De
More View scription The HMC283LM1 is a Medium Power Amplifier (MPA) in a SMT leadless chip carrier package covering 17 to 40 GHz. The LM1 is a true surface mount broadband millimeterwave package offering low loss & excellent I/O match preserving MMIC chip performance. Utilizing a GaAs PHEMT process, the device offers 20 dB gain and +21 dBm ouput power from a bias supply of +3.5V @ 300mA. As an alternative to chip-and-wire hybrid assemblies the HMC283LM1 eliminates the need for wirebonding, thereby providing a consistent connection interface for the customer. The amplifier may be used as a frequency doubler. A built-in-test pad (Vdet) allows monitoring of microwave output power. All data is with the non-hermetic, epoxy sealed LM1 packaged MPA device mounted in a 50 ohm test fixture. Electrical Specifications, TA = +25° C, Vdd= +3.5V*, ldd = 300 mA Parameter Frequency Range Gain Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 6 4 30 14 17 22 15 Min. Typ. 17 - 40 20 0.05 10 7 40 18 21 27 10 300 330 0.07 6 4 35 14 17 21 17 Max. Min. Typ. 21 - 30 22 0.05 12 8 45 18 21 27 10 300 330 0.07 Max. Units GHz dB dB/°C dB dB dB dBm dBm dBm dB mA *Vdd = +3.5V, adjust Vgg = Vgg1, Vgg2 between -2.0 to +0.4V to achieve Idd = 300 mA typical. 8 - 14 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v04.1201 HMC283LM1 SMT MEDIUM POWER GaAs MMIC AMPLIFIER, 17 - 40 GHz Broadband Gain & Return Loss 30 25 20 Gain vs. Temperature 30 25 20 8 AMPLIFIERS - SMT 8 - 15 RESPONSE (dB) 15 5 0 -5 -10 -15 -20 -25 10 15 20 25 30 35 GAIN (dB) 10 S11 S21 S22 15 10 5 0 +25C +85C -40C 40 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 Input Return Loss vs. Temperature 0 REVERSE ISOLATION (dB) INPUT RETURN LOSS (dB) -10 -20 -30 -40 -50 -60 16 18 20 22 24 26 28 30 32 34 36 +25C +85C -40C -5 -10 -15 +25C +85C -40C -20 -25 38 40 42 16 18 20 22 24 26 28 30 32 34 36 38 40 42 FREQUENCY (GHz) FREQUENCY (GHz) P1dB and Psat @ 25 °C 25 Output Return Loss vs. Temperature 0 OUTPUT P1dB & Psat (dBm) 23 OUTPUT RETURN LOSS (dB) Psat 21 19 17 -5 -10 P1dB 15 13 16 18 20 22






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