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HMC313E

Analog Devices

GaAs InGaP HBT MMIC

DRIVER &GAIN BLOCK AMPLIFIERS -SMT v07.0418 Typical Applications Ideal as a Driver & Amplifier for: • 2.2 - 2.7 GHz MMD...


Analog Devices

HMC313E

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Description
DRIVER &GAIN BLOCK AMPLIFIERS -SMT v07.0418 Typical Applications Ideal as a Driver & Amplifier for: 2.2 - 2.7 GHz MMDS 3.5 GHz Wireless Local Loop 5 - 6 GHz UNII & HiperLAN Functional Diagram HMC313 / 313E GaAs InGaP HBT MMIC BROADBAND AMPLIFIER GAIN BLOCK, DC - 6 GHz Features P1dB Output Power: +14 dBm Output IP3: +27 dBm Gain: 17 dB Single Supply: +5V High Reliability GaAs HBT Process Ultra Small Package: SOT26 Included in the HMC-DK001 Designer’s Kit General Description The HMC313 & HMC313E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC amplifiers that operate from a single Vcc supply. The surface mount SOT26 amplifier can be used as a broadband gain stage or used with external matching for optimized narrow band applications. With Vcc biased at +5V, the HMC313(E) offers 17 dB of gain and +15 dBm of saturated power while only requiring 50 mA of current. Electrical Specifications, TA = +25 °C, Vcc = +5.0V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) @ 1.0 GHz Saturated Output Power (Psat) @ 1.0 GHz Output Third Order Intercept (IP3) @ 1.0 GHz Noise Figure Supply Current (Icc) Note: Data taken with broadband bias tee on device output. Vcc = +5V Min. Typ. Max. DC - 6 14 17 20 0.02 0.03 7 6 30 11 14 15 24 27 6.5 50 Units GHz dB dB/°C dB dB dB dBm dBm dBm dB mA Information furnished by Analog Devices is believed to be accur...




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