HMC326MS8G

AMPLIFIERS - DRIVER & GAIN BLOCK - SMT v11.1019 Typical Applications The HMC326MS8G / HMC326MS8GE is ideal for: Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier HMC326MS8G / 326MS8GE GaAs InGaP HBT MMIC DRIVER AMPLIFIER, 3.0 - 4.5 GHz Features Psat Output Power: +26 dBm > 40% PAE Output IP3: +36 dBm High Gain: 21 dB Vs: +5V Ultra Small Package: MSOP8G Functional Diagram General Description The HMC326MS8G & HMC326MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifiers which operate between 3.0 and 4.5 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 21 dB of gain and +26 dBm of saturated power from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use. Internal circuit matching was optimized to provide greater than 40% PAE. Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icc) Supply Current (Icc) Control Current (Ipd) Switching Speed Min. 18 21 32 Vpd = 0V Vpd = 5V 110 tOn/tOff Typ. 3.0 - 4.5 21 0.025 12 7 23.5 26 36 5 1 130 7 10 Max. 0.035 160 Units GHz dB dB / °C d...