AMPLIFIERS - LOW NOISE - SMT
v03.0610
7 Typical Applications The HMC375LP3 / HMC375LP3E is ideal for basestation receiv...
AMPLIFIERS - LOW NOISE - SMT
v03.0610
7 Typical Applications The HMC375LP3 / HMC375LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA DECT
Functional Diagram
HMC375LP3 / 375LP3E
GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 1.7 - 2.2 GHz
Features
Noise Figure: 0.9 dB Output IP3: +34 dBm Gain: 17 dB Very Stable Gain vs. Supply & Temperature Single Supply: +5V @ 136 mA 50 Ohm Matched Output
General Description
The HMC375LP3 & HMC375LP3E high dynamic range GaAs PHEMT MMIC Low Noise
Amplifiers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 0.9 dB noise figure, 17 dB gain and +33 dBm output IP3 from a single supply of +5V @ 136mA. Input and output return losses are 14 dB typical with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. For applications which require improved noise figure, please see the HMC618LP3(E).
7 - 74
Electrical Specifications, TA = +25° C, Vs = +5V
Parameter
Min. Typ. Max.
Frequency Range
1.8 - 1.9
Gain
16.5 18.5
Gain Variation Over Temperature
0.014 0.021
Noise Figure
1.0 1.35
Input Return Loss
12
Output Return Loss
13
Reverse Isolation
35
Output Power for 1dB Compression (P1dB)
16 18.5
Saturated Output Power (Psat)
19.5
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone,
34
1 MHz tone spacing)
Supply Current (Idd)
136
Min. Typ. Max. 1.9 - 2.0
15.5 17.5 0....