HMC376LP3E

AMPLIFIERS - LOW NOISE - SMT v01.0610 7 Typical Applications The HMC376LP3 / HMC376LP3E is ideal for: Cellular/3G Infrastructure Base Stations & Repeaters CDMA, W-CDMA, & TD-SCDMA Private Land Mobile Radio GSM/GPRS & EDGE UHF Reallocation Applications Functional Diagram HMC376LP3 / 376LP3E GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 700 - 1000 MHz Features Noise Figure: 0.7 dB Output IP3: +36 dBm Gain: 15 dB Externally Adjustable Supply Current Single Positive Supply: +5V 50 Ohm Matched Input/Output General Description The HMC376LP3 & HMC376LP3E are GaAs PHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 0.7 dB noise figure, 15 dB gain and +36 dBm output IP3 from a single supply of +5V. The HMC376LP3(E) feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC617LP3(E). 7-1 Electrical Specifications, TA = +25° C, Vdd = +5V, Rbias = 10 Ohms* Frequency Range Gain Parameter Min. Typ. Max. 810 - 960 12.5 14.5 Min. Typ. 700 - 1000 11.5 14.5 Gain Variation Over Temperature 0.005 0.01 0.005 Noise Figure 0.7 1.0 0.7 Input Return Loss 13 14 Output Return Loss 12 12 Reverse Isolation 20 22 Output Power for 1dB Compression (P1dB) 21.5 21 Saturated Output Power...