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HMC386LP4E Datasheet

Part Number HMC386LP4E
Manufacturers Analog Devices
Logo Analog Devices
Description MMIC VCO
Datasheet HMC386LP4E DatasheetHMC386LP4E Datasheet (PDF)

v04.1209 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • Wireless Infrastructure • Industrial Controls • Test Equipment • Military Functional Diagram 12 HMC386LP4 / 386LP4E MMIC VCO w/ BUFFER AMPLIFIER, 2.6 - 2.8 GHz Features Pout: +5 dBm Phase Noise: -114 dBc/Hz @100 kHz No External Resonator Needed Single Supply: 3V @ 35mA 24 Lead 4x4mm QFN Package: 16 mm2 General Description The HMC386LP4 & HMC386LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with int.

  HMC386LP4E   HMC386LP4E






Part Number HMC386LP4
Manufacturers Analog Devices
Logo Analog Devices
Description MMIC VCO
Datasheet HMC386LP4E DatasheetHMC386LP4 Datasheet (PDF)

v04.1209 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • Wireless Infrastructure • Industrial Controls • Test Equipment • Military Functional Diagram 12 HMC386LP4 / 386LP4E MMIC VCO w/ BUFFER AMPLIFIER, 2.6 - 2.8 GHz Features Pout: +5 dBm Phase Noise: -114 dBc/Hz @100 kHz No External Resonator Needed Single Supply: 3V @ 35mA 24 Lead 4x4mm QFN Package: 16 mm2 General Description The HMC386LP4 & HMC386LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with int.

  HMC386LP4E   HMC386LP4E







MMIC VCO

v04.1209 Typical Applications Low noise MMIC VCO w/Buffer Amplifier for: • Wireless Infrastructure • Industrial Controls • Test Equipment • Military Functional Diagram 12 HMC386LP4 / 386LP4E MMIC VCO w/ BUFFER AMPLIFIER, 2.6 - 2.8 GHz Features Pout: +5 dBm Phase Noise: -114 dBc/Hz @100 kHz No External Resonator Needed Single Supply: 3V @ 35mA 24 Lead 4x4mm QFN Package: 16 mm2 General Description The HMC386LP4 & HMC386LP4E are GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 2.6 to 2.8 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 5 dBm typical from a single supply of 3V @ 35mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package. VCOS - SMT 12 - 14 Electrical Specifications, TA = +25 °C, Vcc = +3V Parameter Min. Frequency Range Power Output 2 SSB Phase Noise @ 100 kHz Offset, Vtune = +5V @ RF Output Tune Voltage (Vtune) 0 Supply Current (Icc) (Vcc = +3V) Tune Port Leakage Current Output Return Loss Harmonics 2nd 3rd Pulling (into a 2.0:1 VSWR) Pushing @ Vtune = +5V Frequency Drift Rate Typ. 2.6 - 2.8 5 -114 35 9 -5 -15 3 2 0.3 Max. 10 10 Units GHz dBm dBc/Hz V mA μA dB dBc dBc MHz pp MHz/V MHz/°C IrrliniecgfseohpntrsomsenoasftiisibtohingilrirtdyafunpirstnaeairdstsihesbesFuydm.


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