HMC413QS16G

HMC413QS16G / 413QS16GE v04.0505 GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz LINEAR & POWER AMPLIFIERS - SMT 11 Typical Applications This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications: Cellular / PCS / 3G Portable & Infrastructure Wireless Local Loop Functional Diagram Features Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit General Description The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control. 11 - 50 Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V Parameter Frequency Vs= 3.6V Vs= 5V Min. Typ. Max. Min. Typ. Gain 1.6 - 1.7 GHz 18 21 1.7 - 2.0 GHz 19 22 2.0 - 2.1 GHz 18 21 2.1 - 2.2 GHz 17 20 19 22 20 23 19 22 18 21 Gain Variation Over Temperature 1.6 - 2.2 GHz 0.025 0.035 0.025 Input Return Loss 1.6 - 2.2 GHz 10 10 Output Return Los...