DOWNCONVERTER. HMC421QS16 Datasheet

HMC421QS16 Datasheet PDF

Part HMC421QS16
Description PCS/UMTS HIGH IP3 RFIC DOWNCONVERTER
Feature HMC421QS16 / 421QS16E v04.0810 PCS/UMTS HIGH IP3 RFIC DOWNCONVERTER, 1.4 - 2.3 GHz MIXERS - DOWNC.
Manufacture Analog Devices
Datasheet
Download HMC421QS16 Datasheet






HMC421QS16
HMC421QS16 / 421QS16E
v04.0810
PCS/UMTS HIGH IP3 RFIC
DOWNCONVERTER, 1.4 - 2.3 GHz
9
9-1
Typical Applications
Features
The HMC421QS16 / HMC421QS16E is ideal for:
Input IP3: +19 dBm
• GSM, GPRS & EDGE Infrastructure
Integrated IF & LO Amps: +10 dBm LO
• CDMA, WCDMA Infrastructure
Conversion Gain: 9 dB
• PHS & PDC Infrastructure
Noise Figure: 9 dB
LETE Functional Diagram
Single Positive Supply: +5V @ 60 mA
General Description
The HMC421QS16 & HMC421QS16E are high
linearity down-converter receiver ICs suitable for
PCS/UMTS infrastructure applications. The receiver
IC is designed to support UMTS applications where
a high third order intercept point (OIP3) is required.
A passive mixer coupled with a high dynamic range
IF amplifier achieves an Input IP3 of +19 dBm. The
converter provides a gain of 8 dB and 9 dB typical
single side band noise. The IC operates from positive
+5V rails and consumes 60 mA of current. The design
requires no external Baluns. The mixer supports IF
frequencies between 50 MHz and 300 MHz.
SO Electrical Specifications, TA = +25 °C, LO = +10 dBm, Vdd = 5V
Parameter
B Frequency Range, RF
Frequency Range, LO
O Frequency Range, IF*
IF= 100 MHz
Min. Typ. Max.
1.4 - 1.6
1.3 - 1.55
50 - 100
IF= 250 MHz
Min. Typ. Max.
1.7 - 2.0
1.4 - 1.95
50 - 300
IF= 250 MHz
Min. Typ. Max.
2.0 - 2.3
1.7 - 2.25
50 - 300
Units
GHz
GHz
MHz
Conversion Gain
6
9
7
9
5
8
dB
Noise Figure (SSB)
11
9
9.5
dB
LO to RF Isolation
23
29
28
33
26
32
dB
LO to IF Isolation
35
42
42
52
50
60
dB
RF to IF Isolation
35
42
42
52
50
60
dB
IP3 (Input)
15
18
17
19
17
20
dBm
1 dB Compression (Input)
3
6
4
6.5
4
7
dBm
LO Input Drive Level (Typical)
+8 to +12
+8 to +12
+8 to +12
dBm
Supply Current (Idd for LO & IF)
(IF bias resistor= 6.8 Ohms)
84
105
84
105
84
105
mA
* If matching must be tuned for optimal results, see application circuit herein.
IrrliniecgfseohpntrsFomsenoaosftiisirbtohingilprirtdyafrunpiirstcnaeairdsetsihesb,esuydmdthimebaedtyplmlbiiAcvyaanPyeAtaiorlhnroenaygsoluoonlDargt eofenDrvtoh:eidmcev9ericwistt7esoissi8usefspo-beur2.neliadtSl5iseepcvu0reeseca-deinf3,iyoctno3aoprtrida4boftenoee3srnartascsnoucyrb:ujipernHFaacfrtttaeieinttnoxgtateicn:rtmhdieg9aehnrn7teMgstls8eiaooibwf-cf2lAieptrhn.5aooatHue0lwotong-wntas3oDeotvvi3ecreeveo7ri,.cth3eNCnesoor.orpFOPOoohnrroredanpTeetreii:rocc7enhO8,n,1nod-23l-eo0l2lgii9vnyAe-e4rWly7pa,a0hyta0,anw•PdR.wOOtoor.wdBaep.dohrlaxo,ictn9Ctel1iitn0hoee6re.d,caleNmtorwosms:rwwfAowonro.daadln,o,agMMloADAge.0cv02oic10me68s22,-49In10c.6,
Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urepsppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D



HMC421QS16
v04.0810
HMC421QS16 / 421QS16E
PCS/UMTS HIGH IP3 RFIC
DOWNCONVERTER, 1.4 - 2.3 GHz
Conversion Gain
vs. Temperature @ LO = +10 dBm
Isolation @ LO = +10 dBm
14
0
9
12
-15
10
-30
8
6
+25 C
4
-40 C
+85 C
2
E 0
1
1.5
2
2.5
FREQUENCY (GHz)
T Conversion Gain vs. LO Drive
14
E 12
10
L 8
6
LO = +4 dBm
4
LO = +6 dBm
LO = +8 dBm
O LO = +10 dBm
2
LO = +12 dBm
LO = +13 dBm
0
1
1.5
2
2.5
S FREQUENCY (GHz)
Conversion Gain
B vs. Vdd @ LO = +10 dBm
14
12
O 10
-45
-60
-75
-90
1
RF/IF
LO/RF
LO/IF
1.5
2
FREQUENCY (GHz)
Return Loss @ LO = +10 dBm
0
-5
-10
-15
-20
-25
-30
1
RF
LO
1.5
2
FREQUENCY (GHz)
IF Bandwidth @ LO = +10 dBm
14
10
2.5
2.5
6
8
6
+4.5V
+5.0V
4
+5.5V
2
CONVERSION GAIN
RETURN LOSS
-2
2
-6
0
1
1.5
2
2.5
FREQUENCY (GHz)
-10
0
0.1
0.2
0.3
0.4
0.5
FREQUENCY (GHz)
IrrliniecgfseohpntrsFomsenoaosftiisirbtohingilprirtdyafrunpiirstcnaeairdsetsihesb,esuydmdthimebaedtyplmlbiiAcvyaanPyeAtaiorlhnroenaygsoluoonlDargt eofenDrvtoh:eidmcev9ericwistt7esoissi8usefspo-beur2.neliadtSl5iseepcvu0reeseca-deinf3,iyoctno3aoprtrida4boftenoee3srnartascsnoucyrb:ujipernHFaacfrtttaeieinttnoxgtateicn:rtmhdieg9aehnrn7teMgstls8eiaooibwf-cf2lAieptrhn.5aooatHue0lwotong-wntas3oDeotvvi3ecreeveo7ri,.cth3eNCnesoor.orpFOPOoohnrroredanpTeetreii:rocc7enhO8,n,1nod-23l-eo0l2lgii9vnyAe-e4rWly7pa,a0hyta0,anw•PdR.wOOtoor.wdBaep.dohrlaxo,ictn9Ctel1iitn0hoee6re.d,caleNmtorwosms:rwwfAowonro.daadln,o,agMMloADAge.0cv02oic10me68s22,-49In10c.6,
Trademarks and registered trademarks arAe tphepplriocpearttyioofntheSir urepsppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D
9-2


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)