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HMC454ST89

Analog Devices

InGaP HBT

HMC454ST89 / 454ST89E v05.0710 InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz Typical Applications Features The...


Analog Devices

HMC454ST89

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Description
HMC454ST89 / 454ST89E v05.0710 InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz Typical Applications Features The HMC454ST89 / HMC454ST89E is ideal for Output IP3: +40 to +42 dBm applications requiring a high dynamic range amplifier: Gain: 12.5 dB @ 2150 MHz GSM, GPRS & EDGE 50% PAE @ +28 dBm Pout CDMA & W-CDMA +17.5 dBm W-CDMA Channel Power@ -45 dBc ACP 9 CATV/Cable Modem Fixed Wireless & WLL Single +5V Supply Industry Standard SOT89 Package Included in the HMC-DK002 Designer’s Kit Functional Diagram General Description The HMC454ST89 & HMC454ST89E are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain is typically 17.8 dB from 0.8 to 1.0 GHz and 12.5 dB from 1.8 to 2.2 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +40 dBm at 0.9 GHz or +42 dBm at 2.0 GHz. The high output IP3 and PAE makes the HMC454ST89 an ideal driver amplifier for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications. AMPLIFIERS - LINEAR & POWER - SMT 9 - 190 Electrical Specifications, TA = +25°C, Vs= +5V [1] Parameter Frequency Range Gain Min. Typ. Max. 824 - 960 16 17.8 Min. Typ. Max. 1800 - 2000 11 12.5 Min. Typ. Max. 2000 - 2200 11 12.5 Units MHz dB Gain Variation Over Temperature 0.008 0.016 0.008 0.016 0.008 0.016 dB / °C Inpu...




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