HMC455LP3

HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 11 Typical Applications This amplifier is ideal for high linearity applications: Multi-Carrier Systems GSM, GPRS & EDGE CDMA & WCDMA PHS Functional Diagram Features Output IP3: +42 dBm Gain: 13 dB 56% PAE @ +28 dBm Pout +19 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package General Description The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifiers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance. LINEAR & POWER AMPLIFIERS - SMT Electrical Specifications, TA = +25° C, Vs= +5V Parameter Frequency Range Gain Min. Typ. Max. 1.7 - 1.9 11.5 13.5 Min. Typ. Max. Min. Typ. Max. 1.9 - 2.2 2.2 - 2.5 10.5 13 9 11.5 Gain Variation Over Temperature 0.012 0.02 0.012 0.02 0.012 0.02 Input Return Loss Output Return Loss Output Power for 1dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply C...