v02.0705
11
Typical Applications
A high linearity 1 watt amplifier for: • Multi-Carrier Systems • GSM, GPRS & EDGE • C...
v02.0705
11
Typical Applications
A high linearity 1 watt amplifier for: Multi-Carrier Systems GSM, GPRS & EDGE CDMA & W-CDMA PHS Balanced or Push-Pull Configurable
Functional Diagram
HMC461LP3 / 461LP3E
InGaP HBT 1 Watt High IP3 AMPLIFIER, 1.7 - 2.2 GHz
Features
+45 dBm Output IP3 (Balanced Configuration) 12 dB Gain 48% PAE @ +30.5 dBm Pout +20 dBm W-CDMA Channel Power @ -45 dBc ACP 3x3 mm QFN SMT Package
General Description
The HMC461LP3 & HMC461LP3E are 1.7 - 2.2 GHz high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) dual-channel MMIC
amplifiers. The linear performance of two HMC455LP3 high IP3 drivers is offered in this single IC which can be configured in a balanced or push-pull amplifier circuit. The amplifier provides 12 dB of gain and +30.5 dBm of saturated power at 48% PAE from a single +5 Vdc supply while utilizing external baluns in a balanced configuration. The high output IP3 of +45 dBm coupled with the low VSWR of 1.2:1 make the HMC461LP3 & HMC461LP3E ideal driver
amplifiers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the dual MMIC amplifier IC. The LP3 provides an exposed base for excellent RF and thermal performance.
LINEAR & POWER
AMPLIFIERS - SMT
Electrical Specifications*, TA = +25° C, Vs= +5V
Parameter Frequency Range Gain
Min.
Typ.
Max.
Min.
Typ.
Max.
1.7 - 1.9
1.9 - 2.2
10
12.5
9
12
Gain Variation Over Temperature
0.012
0.02
0.012
0.02
Input Retur...