HMC464

MICROWAVE CORPORATION v02.0704 HMC464 GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz Features +26 dBm P1dB Output Power Gain: 16 dB +30 dBm Output IP3 Supply Voltage: +8.0V @ 290 mA 50 Ohm Matched Input/Output 3.12 mm x 1.63 mm x 0.1 mm 1 AMPLIFIERS - CHIP Typical Applications The HMC464 wideband driver is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram General Description The HMC464 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between 2 and 20 GHz. The amplifier provides 16 dB of gain, +30 dBm Output IP3 and +26 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 - 18 GHz making the HMC464 ideal for EW, ECM and radar driver amplifier applications. The HMC464 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into MultiChip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA* Parameter Frequency Range Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) (Vdd= 8V, Vgg1= -0.5V Typ.) 23.5 14 Min. Typ. 2.0 - 6.0 16 ±0.25 0.02 15 14 ...