pHEMT. HMC636ST89E Datasheet

HMC636ST89E Datasheet PDF

Part HMC636ST89E
Description GaAs pHEMT
Feature HMC636ST89 / 636ST89E v02.0311 GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz Typical Applic.
Manufacture Analog Devices
Datasheet
Download HMC636ST89E Datasheet





HMC636ST89E
HMC636ST89 / 636ST89E
v02.0311
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
Typical Applications
The HMC636ST89(E) is ideal for:
• Cellular / PCS / 3G
• WiMAX, WiBro, & Fixed Wireless
• CATV & Cable Modem
9
• Microwave Radio
Functional Diagram
Features
Low Noise Figure: 2.2 dB
High P1dB Output Power: +22 dBm
High Output IP3: +40 dBm
Gain: 13 dB
50 Ohm I/O’s - No External Matching
Industry Standard SOT89 Package
General Description
The HMC636ST89(E) is a GaAs pHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver, a
Low Noise Amplifier, or a Gain Block with up to +23
dBm output power. This versatile Gain Block Amplifier
is powered from a single +5V supply and requires no
external matching components The internally matched
topology makes this amplifier compatible with virtually
any PCB material or thickness.
Electrical Specifications, Vs= 5.0 V, TA = +25° C
Parameter
Frequency Range
Min
Typ.
Max
0.2 - 2.0
Gain
10
13
Gain Variation Over Temperature
0.01
0.02
Input Return Loss
10
Output Return Loss
13
Reverse Isolation
22
Output Power for 1 dB Compression (P1dB)
19
22
Output Third Order Intercept (IP3)
36
39
Noise Figure
2.5
Supply Current (Icq)
155
Note: Data taken with broadband bias tee on device output.
Min.
Typ.
Max.
2.0 - 4.0
5
10
0.01
0.02
10
15
20
20
23
36
39
2
155
175
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dB
mA
9-1
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Trademarks and registered trademarks aArepthpelpircopaetrityoonf thSeiur rpesppeoctrivte: oPwhneorsn. e: 978-250-33A4p3plicoartioanpSpusp@pohrti:tPtihteo.nceo: 1m-800-ANALOG-D



HMC636ST89E
v02.0311
Broadband Gain & Return Loss
20
15
10
5
S21
S11
0
S22
-5
-10
-15
-20
0
1
2
3
4
5
6
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0
-5
-10
-15
-20
0
+25C
+85C
-40C
1
2
3
4
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-5
+25C
+85C
-40C
-10
-15
-20
-25
0
1
2
3
4
FREQUENCY (GHz)
HMC636ST89 / 636ST89E
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
Gain vs. Temperature
16
14
12
10
8
6
+25C
+85C
4
-40C
2
0
0
1
2
3
4
FREQUENCY (GHz)
9
Output Return Loss vs. Temperature
0
+25C
-5
+85C
-40C
-10
-15
-20
0
1
2
3
4
FREQUENCY (GHz)
Noise Figure vs. Temperature
10
9
8
+25C
+85C
7
-40C
6
5
4
3
2
1
0
0
1
2
3
4
FREQUENCY (GHz)
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Trademarks and registered trademarks aArepthpelpircopaetrityoonf thSeiur rpesppeoctrivte: oPwhneorsn. e: 978-250-33A4p3plicoartioanpSpusp@pohrti:tPtihteo.nceo: 1m-800-ANALOG-D
9-2




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