Amplifiers - Low Noise - SMT
7
7-1
HMC668LP3 / 668LP3E
v03.0610
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 700 - ...
Amplifiers - Low Noise - SMT
7
7-1
HMC668LP3 / 668LP3E
v03.0610
GaAs PHEMT MMIC LNA w/
FAILSAFE BYPASS MODE, 700 - 1200 MHz
Typical Applications
Features
The HMC668LP3(E) is ideal for:
Noise Figure: 0.9 dB
Cellular/3G and LTE/WiMAX/4G
Output IP3: +33 dBm
BTS & Infrastructure
Gain: 16 dB
Repeaters and Femtocells
Failsafe Operation:
Tower Mounted
Amplifiers Test & Measurement Equipment
OLETE Functional Diagram
Bypass is enabled when LNA is unpowered
Single Supply: +3V or +5V
16 Lead 3x3mm QFN Package: 9 mm2
General Description
The HMC668LP3(E) is a versatile, high dynamic range GaAs MMIC Low Noise Amplifier that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for receivers and LNA modules operating between 0.7 and 1.2 GHz and provides 0.9 dB noise figure, 16 dB of gain and +33 dBm IP3 from a single supply of +5V @ 57mA. Input and output return losses are excellent and no external matching components are required. A single control line is used to switch between LNA mode and a low loss bypass mode. The failsafe topology enables the LNA bypass path, when no DC power is available. The HMC668LP3(E) offers improved noise figure versus the previously released HMC373LP3(E).
S Electrical Specifications, TA = +25° C, Rbias = 0 Ohm
Parameter
LNA Mode
Vdd = +3V
Vdd = +5V
Bypass Mode
Failsafe Mode
Units
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
B Frequency Range
0.7 - 1.2
0.7 - 1.2
0.7 - 1.2
0.7 - 1.2
GHz
G...