HMC717LP3E

HMC717LP3E v06.1113 GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz AMPLIFIER - LOW NOISE - SMT Typical Applications Features The HMC717LP3E is ideal for: Noise Figure: 1.1 dB Fixed Wireless and LTE/WiMAX/4G Gain: 16.5 dB BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points OLETE Functional Diagram Output IP3: +31.5 dBm Single Supply: +3V to +5V 16 Lead 3x3mm QFN Package: 9 mm2 General Description The HMC717LP3E is a GaAs PHEMT MMIC Low Noise Ampli er that is ideal for xed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The ampli er has been optimized to provide 1.1 dB noise gure, 16.5 dB gain and +31.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. S Electrical Speci cations B TA = +25° C, Rbias = 2k Ohms for Vdd = 5V, Rbias = 20k Ohms for Vdd = 3V [1] [2] Parameter Vdd = +3V Min. Typ. Max. Vdd = +5V Units Min. Typ. Max. OFrequency Range 4.8 - 6.0 4.8 - 6.0 GHz Gain 12 14.3 21 13.5 16.5 21 dB Gain Variation Over Temperature 0.01 0.01 dB/ °C Noise Figure 1.25 1.5 1.1 1.4 dB Input Return Loss 13 13 dB Output Return Loss 13 18 dB Outp...