Amplifiers - Low Noise - SMT
7
7-1
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - ...
Amplifiers - Low Noise - SMT
7
7-1
HMC718LP4 / 718LP4E
v01.1008
GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz
Typical Applications
Features
The HMC718LP4(E) is ideal for:
Noise Figure: 0.9 dB
Cellular/3G and LTE/WiMAX/4G
Gain: 32 dB
BTS & Infrastructure
Output IP3: +40 dBm
Repeaters and Femtocells
Single Supply: +3V to +5V
Access Points Test Equipment
OLETE Functional Diagram
50 Ohm Matched Input/Output
24 Lead 4x4 mm SMT Package: 16 mm2
General Description
The HMC718LP4(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 600 and 1400 MHz. The amplifier has been optimized to provide 0.9 dB noise figure, 32 dB gain and +40 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC718LP4(E) shares the same package and pinout with the HMC719LP3(E) 1.3 - 2.9 GHz LNA. The HMC718LP4(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application.
S Electrical Specifications, TA = +25°C, Rbias = 3.92k Ohms*
B Parameter O Frequency Range
Vdd = +3V
Min. Typ. Max. Min. Typ. Max.
0.6 - 1.0
1.0 - 1.4
Vdd = +5V
Min. Typ. Max. Min. Typ. Max.
0.6 - 1.0
1.0 - 1.4
Units GHz
Gain
26 30.5
25 27.5
27
32
25
29
dB
Gain Var...