MMIC. HMC719LP4E Datasheet

HMC719LP4E Datasheet PDF

Part HMC719LP4E
Description GaAs PHEMT MMIC
Feature Amplifiers - Low Noise - SMT 7 7-1 HMC719LP4 / 719LP4E v04.0610 GaAs PHEMT MMIC HIGH IP3 LOW NOI.
Manufacture Analog Devices
Datasheet
Download HMC719LP4E Datasheet





HMC719LP4E
7
7-1
HMC719LP4 / 719LP4E
v04.0610
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
Typical Applications
Features
The HMC719LP4(E) is ideal for:
Noise Figure: 1.0 dB
• Cellular/3G and LTE/WiMAX/4G
Gain: 34 dB
• BTS & Infrastructure
Output IP3: +39 dBm
• Repeaters and Femtocells
Single Supply: +3V to +5V
• Access Points
• Test Equipment & Military
OLETE Functional Diagram
50 Ohm Matched Input/Output
24 Lead 4x4 mm SMT Package: 16 mm2
General Description
The HMC719LP4(E) is a GaAs PHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 1.3 and 2.9 GHz. The amplifier
has been optimized to provide 1.0 dB noise figure,
34 dB gain and +39 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC719LP4(E) shares the same package and pinout
with the HMC718LP3(E) 600 - 1400 MHz LNA. The
HMC719LP4(E) can be biased with +3V to +5V and
features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application.
S Electrical Specifications, TA = +25°C, Rbias = 1.5k Ohms*
B Parameter
O Frequency Range
Vdd = +3V
Min. Typ. Max. Min. Typ. Max.
1.3 - 2.2
2.2 - 2.9
Vdd = +5V
Min. Typ. Max. Min. Typ. Max.
1.3 - 2.2
2.2 - 2.9
Units
GHz
Gain
27
32
22 26.5
29
35
24
28
dB
Gain Variation Over Temperature
0.02
0.02
0.02
0.02
dB/ °C
Noise Figure
1.0 1.3
1.3 1.6
0.95 1.2
1.25 1.6
dB
Input Return Loss
16
13.5
17.5
16.5
dB
Output Return Loss
10.5
9.5
13.5
11.5
dB
Output Power for 1 dB
Compression (P1dB)
12.5 15.5
12.5 15.5
18 21.5
18 21.5
dBm
Saturated Output Power (Psat)
18
18.5
23
23
dBm
Output Third Order Intercept (IP3)
32
31
39
39
dBm
Total Supply Current (Idd)
187 220
187 220
272 315
272 315 mA
* Rbias resistor sets current, see application circuit herein, Vdd = Vdd1 = Vdd2
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HMC719LP4E
v04.0610
HMC719LP4 / 719LP4E
GaAs PHEMT MMIC HIGH IP3
LOW NOISE AMPLIFIER, 1.3 - 2.9 GHz
7
Broadband Gain & Return Loss [1] [2]
Gain vs. Temperature [1]
40
40
S21
30
20
35
10
Vdd=5V
Vdd=3V
S11
0
-10
-20
-30
S22
-40
E 0.5 0.8 1.1 1.4 1.7 2 2.3 2.6 2.9 3.2 3.5
FREQUENCY (GHz)
T Gain vs. Temperature [2]
40
E 35
L 30
25
+25C
+85C
O -40C
20
1.2
1.5
1.8
2.1
2.4
2.7
3
FREQUENCY (GHz)
BS Output Return Loss vs. Temperature [1]
0
O -5
+25C
+85C
30
25
+25C
+85C
-40C
20
1.2
1.5
1.8
2.1
2.4
2.7
3
FREQUENCY (GHz)
Input Return Loss vs. Temperature [1]
0
-5
-10
+25C
+85C
-40C
-15
-20
-25
-30
1.2
1.5
1.8
2.1
2.4
2.7
3
FREQUENCY (GHz)
Reverse Isolation vs. Temperature [1]
0
-20
+25C
+85C
-40C
-40C
-10
-40
-15
-60
-20
1.2
1.5
1.8
2.1
2.4
2.7
3
FREQUENCY (GHz)
-80
1.2
1.5
1.8
2.1
2.4
2.7
3
FREQUENCY (GHz)
[1] Vdd = 5V, Rbias = 1.5K [2] Vdd = 3V, Rbias = 1.5K
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that maPy rhesoulnt fero:m9it7s u8s-e2. S5p0ec-if3ica3ti4on3s subjeFctatoxc:h9an7ge8w-2ith5ou0t -n3oti3ce7. 3No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
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Trademarks and registered trademarks areAtphepplroicpearttyioofntheSir ruespppecotivret:owPnehrso. ne: 978-250-3A3p4p3licaotrionaSpuppsp@orht:iPtthitoen.ec: o1-m800-ANALOG-D
7-2




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