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HMC737LP4

Analog Devices

MMIC VCO

HMC737LP4 / 737LP4E v01.0209 MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz Typical Applications The HMC737LP4(E) is...


Analog Devices

HMC737LP4

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HMC737LP4 / 737LP4E v01.0209 MMIC VCO w/ HALF FREQUENCY OUTPUT 14.9 - 15.5 GHz Typical Applications The HMC737LP4(E) is ideal for: Point to Point/Multipoint Radio Test Equipment & Industrial Controls SATCOM Military End-Use Functional Diagram 8 Features Dual Output: Fo = 14.9 - 15.5 GHz Fo/2 = 7.45 - 7.75 GHz Pout: +9 dBm Phase Noise: -105 dBc/Hz @ 100 kHz No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm2 General Description The HMC737LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC737LP4(E) integrate a resonator, negative resistance device, varactor diode and feature half frequency output. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a +4.2V supply voltage. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package, and requires no external matching components. VCOS with Fo/2 OUTPUT - SMT Electrical Specifications, TA = +25° C, Vcc = +4.2V Frequency Range Parameter Power Output SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RFOUT Tune Voltage Supply Current Tune Port Leakage Current (Vtune= 13V) Output Return Loss Harmonics/Subharmonics Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= 5V Frequency Drift Rate Min. Fo Fo/2 RFOUT 6 RFOUT/2 -8 Vtune 1 120 1/2 3/2 Typ. 14.9 - 15.5 7.45 - 7.75 9 -3 -105 150 2.5 -45 -42 12 24 1.2 Max. 13 2 13 180 10 Units GHz GH...




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