HMC738LP4 / 738LP4E
v02.0309
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-16, 20.9 - 23.9 GHz
Typical Applications
The...
HMC738LP4 / 738LP4E
v02.0309
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-16, 20.9 - 23.9 GHz
Typical Applications
The HMC738LP4(E) is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios / LMDS VSAT
Features
Pout: +9 dBm Phase Noise: -95 dBc/Hz @ 100 kHz Typ. No External Resonator Needed 24 Lead 4x4mm SMT Package: 16mm²
Functional Diagram
8
General Description
The HMC738LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC738LP4(E) integrates a resonator, negative resistance device, varactor diode and divide-by-16 prescaler. The VCO’s phase noise performance is excellent over temperature, shock, and process due to the oscillator’s monolithic structure. Power output is +9 dBm typical from a 5V supply
voltage. The
voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package
VCOS with Fo/2 OUTPUT - SMT
8-1
Electrical Specifications, TA = +25° C, Vcc (RF), Vcc (DIG) = +5V
Frequency Range Power Output
Parameter
SSB Phase Noise @ 100 kHz Offset, Vtune= +5V @ RF Output Tune
Voltage Supply Current Tune Port Leakage Current (Vtune= 13V) Output Return Loss Harmonics/Subharmonics
Pulling (into a 2.0:1 VSWR) Pushing @ Vtune= 5V Frequency Drift Rate
Min.
Fo Fo/2
RF OUT
3
RF OUT/2
-3.5
RF OUT/16
-7
Vtune
1
Icc (RF), Icc (DIG)
160
Typ. 20.9 - 23.9
-95 200
3
1/2
-23
3/2
-40
22
-90
3.5
Max.
15 +3.5
-1
13 220 10
Units
GHz
dBm dBm
dBc/Hz V mA µA dB
dBc dBc MHz pp MHz/V MHz/°C
Irrlin...