HMC7441

AMPLIFIERS - LINEAR & POWER - CHIP v00.0913 Typical Applications The HMC7441 is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Military & Space Functional Diagram HMC7441 GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER, 27.5 - 31 GHz Features Saturated Output Power: +34 dBm @ 25% PAE High Output IP3: +38 dBm High Gain: 23 dB DC Supply: +6V @ 1000 mA No External Matching Required Die Size: 3.18 x 2.84 x 0.1 mm General Description The HMC7441 is a three-stage GaAs pHEMT Power Amplifier which operates between 27.5 and 31 GHz. The amplifier provides 23 dB of gain and +34 dBm of saturated output power at 25% PAE from a 6V supply. With an excellent output IP3 of +38 dBm, the HMC7441 is ideal for linear application such as Kaband VSAT or high capacity point-to-point or pointto-multi-point radios demanding +34 dBm of efficient saturated output power. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 Ohm test fixture connected via (1) 0.025mm (1 mil) diameter wire bonds of 0.31 mm (12 mil) length. Electrical Specifications, TA = +25° C Vdd = Vdd1, Vdd2, Vdd3, Vdd4, Vdd5 = +6V, Idd = 1000 mA [1] Parameter Min. Frequency Range Gain 20 Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) 31 Saturated Output Power (Psat) Output Third Order Intercept (IP3)[2] Total Supply Current (Idd) [1] Adjust ...