HMC784MS8GE

v00.0808 HMC784MS8GE GaAs MMIC 10 WATT T/R SWITCH DC - 4 GHz SWITCHES - SPDT - SMT 11 11 - 224 Typical Applications Features The HMC784MS8GE is ideal for: Input P1dB: +40 dBm @ Vdd = +8V Cellular / 4G Infrastructure High Third Order Intercept: +62 dBm WiMAX, WiBro & Fixed Wireless Positive Control: +3 to +8 V Automotive Telematics Low Insertion Loss: 0.4 dB Mobile Radio Test Equipment LETE Functional Diagram MSOP8G Package: 14.8 mm2 General Description The HMC784MS8GE is a high power SPDT switch in an 8-lead MSOPG package for use in transmit-receive applications which require very low distortion at high input signal power levels. The device can control signals from DC to 4 GHz. The design provides exceptional intermodulation performance; > +60 dBm third order intercept at +5V bias. RF1 and RF2 are reflective shorts when “OFF”. On-chip circuitry allows single positive supply operation from +3 Vdc to +8 Vdc at very low DC current with control inputs compatible with CMOS and most TTL logic families. O Electrical Specifications, TA = +25° C, Vctl = 0/Vdd, Vdd = +5V (Unless Otherwise Stated), 50 Ohm System Parameter Frequency Min. Typ. Max. S Insertion Loss DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 3.0 GHz DC - 4.0 GHz 0.4 0.6 0.6 0.8 0.8 1.1 0.9 1.3 1.3 2.0 B Isolation DC - 4.0 GHz 26 30 O Return Loss (On State) DC - 1.0 GHz 35 DC - 2.0 GHz 30 DC - 3.0 GHz 20 Units dB dB dB dB dB dB dB dB dB DC - 4.0 GHz 10 dB Input Powe...