HMC815B

Data Sheet FEATURES Conversion gain: 12 dB typical Sideband rejection: 20 dBc typical OP1dB compression: 20 dBm typical OIP3: 27 dBm typical 2× LO to RF isolation: 10 dB typical 2× LO to IF isolation: 15 dB typical RF return loss: 12 dB typical LO return loss: 15 dB typical IF return loss: 15 dB typical Exposed pad, 4.90 mm × 4.90 mm, 32-terminal, ceramic LCC APPLICATIONS Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors 21 GHz to 27 GHz, GaAs, MMIC, I/Q Upconverter HMC815B FUNCTIONAL BLOCK DIAGRAM 32 GND 31 IF2 30 GND 29 IF1 28 NIC 27 NIC 26 NIC 25 NIC NIC 1 NIC 2 NIC 3 NIC 4 NIC 5 ×2 VDD1 6 NIC 7 NIC 8 NIC = NOT INTERNALLY CONNECTED Figure 1. 24 NIC 23 NIC 22 NIC 21 VDD2 20 NIC 19 NIC 18 VDD3 17 NIC PACKAGE BASE GND LOIN 9 GND 10 NIC 11 VGG 12 GND 13 RFOUT 14 GND 15 NIC 16 13597-001 GENERAL DESCRIPTION The HMC815B is a compact gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) upconverter in a RoHS compliant package that operates from 21 GHz to 27 GHz. This device provides a small signal conversion gain of 12 dB and a sideband rejection of 20 dBc. The HMC815B utilizes a driver amplifier proceeded by an in phase/quadrature (I/Q) mixer where the LO is driven by an active 2× multiplier. IF1 and IF2 mixer inputs are provided, and an external 90° hybrid is needed to select the required sideband....