HMC816LP4E

Amplifiers - Low Noise - SMT 7 7-1 HMC816LP4E v00.1108 SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz Typical Applications The HMC816LP4E is ideal for: Features Low Noise Figure: 0.5 dB Cellular/3G and LTE/WiMAX/4G High Gain: 22 dB BTS & Infrastructure High Output IP3: +37 dBm Repeaters and Femtocells Single Supply: +3V to +5V Public Safety Radio Multi-Channel Applications OLETE Functional Diagram 50 Ohm Matched Input/Output 24 Lead 4x4mm QFN Package: 16 mm2 General Description The HMC816LP4E is a GaAs pHEMT Dual Channel Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 230 and 660 MHz. The amplifier has been optimized to provide 0.5 dB noise figure, 22 dB gain and +37 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent with minimal external matching and bias decoupling components. The HMC816LP4E shares the same package and pinout with the HMC817LP4E & HMC818LP4E LNAs. The HMC817LP4E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the LNA for each application. S Electrical Specifications, TA = +25° C, B Rbias 1, 2 = 10k Ohms*, Vdd = Vdd1, Vdd2 = +5V, Idd = Idd1, Idd2 Parameter O Frequency Range Vdd = +3V Min. Typ. Max. Min. Typ. Max. 230 - 450 450 - 660 Vdd = +5V Min. Typ. Max. Min. Typ. Max. 230 - 450 450 - 66...