HMC8500

Data Sheet FEATURES High small signal gain: 16.0 dB High PAE: 55% typical Instantaneous bandwidth: 0.01 GHz to 2.8 GHz Supply voltage: VDD = 28 V at 100 mA Internal prematching Simple and compact external tuning for optimal performance 32-lead, 5 mm × 5 mm, LFCSP package APPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification GENERAL DESCRIPTION The HMC8500 is a gallium nitride (GaN), broadband power amplifier delivering >10 W with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, and with a ±1.0 dB typical gain flatness. The HMC8500 is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification. >10 W, 0.01 GHz to 2.8 GHz, GaN Power Amplifier HMC8500 FUNCTIONAL BLOCK DIAGRAM 32 GND 31 NIC 30 NIC 29 NIC 28 NIC 27 NIC 26 NIC 25 GND GND 1 NIC 2 NIC 3 RFIN/VGG 4 RFIN/VGG 5 NIC 6 NIC 7 GND 8 HMC8500 24 GND 23 NIC 22 NIC 21 RFOUT/VDD 20 RFOUT/VDD 19 NIC 18 NIC 17 GND PACKAGE BASE Figure 1. GND 9 NIC 10 NIC 11 NIC 12 NIC 13 NIC 14 NIC 15 GND 16 14694-001 The HMC8500 amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package. Note that throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either...